by Riko Seibo
Tokyo, Japan (SPX) Nov 12, 2025
Researchers at CSIR-Nationwide Bodily Laboratory and IIT Madras have fabricated MoS2-coated GaN nanorods on tungsten foil to enhance the photoelectrochemical effectivity of water splitting. Gallium nitride nanorods, valued for electron mobility and stability, face limitations from their broad bandgap proscribing photo voltaic absorption. To deal with this, the workforce built-in molybdenum disulfide – a catalytic materials – onto the nanorods.
MoS2/GaN nanorods demonstrated a photocurrent density of about 172 microamperes per sq. centimeter, outperforming naked GaN nanorods by an element of two.5. This enchancment was linked to Kind II band alignment, which reinforces cost separation, decreases cost switch resistance, and will increase energetic websites.
The heterostructures have been developed utilizing atmospheric stress chemical vapor deposition and laser molecular beam epitaxy. Supplies evaluation utilizing Raman spectroscopy, X-ray diffraction, and X-ray photoelectron spectroscopy confirmed hexagonal phases and mapped digital states.
These findings counsel that MoS2 integration with GaN nanorods offers a pathway to advance solar-driven hydrogen manufacturing expertise. The challenge acquired help from CSIR-FIRST and SAMMARTH. Future work will give attention to scaling the strategy for industrial utility.
Analysis Report:Tailoring GaN nanorods with MoS2 on tungsten foil for enhanced photoelectrochemical efficiency
Associated Hyperlinks
Shanghai Jiao Tong College Journal Middle
All About Photo voltaic Power at SolarDaily.com
